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BSP299 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSP299 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 10 page ![]() Rev 2.1 2 2009-03-25 2 BSP 299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 70 K/W Therminal resistance, junction-soldering point RthJS ≤ 25 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 °C V(BR)DSS 500 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C IDSS - - 10 0.1 100 1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.4 A RDS(on) - 3.1 4 Ω |
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