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LA2000M Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LA2000M Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() Operating Conditions at Ta = 25°C Parameter Symbol Conditions Ratings Unit Operating supply voltage VCC op 3.5 to 14 V Operating Characteristics at Ta = 25°C, VCC =9.0 V,f=1kHz Parameter Symbol Conditions min typ max Unit Circuit current ICC f = 1 kHz, VIN = −45 dBm 6 12 mA Output transistor saturating voltage VCE (sat) I6 = 50 mA 0.5 1.8 V Output diode forward voltage VF IF = 50 mA 0.7 1.5 V Output-off level in input equivalent VIN f = 1 kHz −43 −50 −54 dBm Comparator-on level VTH-H 3.0 3.5 4.0 V Comparator-off level VTH-L 1.8 2.2 2.6 V Pin 7 high level V7 pin 0.45 0.55 V Output transistor leakage current IL-TR 100 µA Output diode leakage current IL-Di 100 µA Equivalent Circuit Block Diagram Ambient temperature, Ta − °C LA2000M No.4158-2/7 |
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