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T630W Datasheet(PDF) 3 Page - STMicroelectronics

Part # T630W
Description  6 A Snubberless??Triac
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T630W Datasheet(HTML) 3 Page - STMicroelectronics

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T630W
Characteristics
Doc ID 3764 Rev 3
3/8
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC) (360° conduction angle)
3.4
°C/W
Rth(j-a)
Junction to ambient
50
°C/W
Figure 1.
Maximum power dissipation versus
rms on-state current
Figure 2.
On-state rms current versus case
temperature
0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
P(W)
I
(A)
T(RMS)
α=180°
180°
α
α
0
1
2
3
4
5
6
7
0
25
50
75
100
125
I
(A)
T(RMS)
T (°C)
C
α=180°
Figure 3.
Relative variation of thermal
impedance versus pulse duration
Figure 4.
On-state characteristics
(maximum values)
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
K=[Z /R
th
th]
t (s)
p
Zth(j-a)
Zth(j-c)
I
(A)
TM
1
10
100
01
234
56
T max.
V = 0.85V
R = 50 m
j
t0
d
Ω
V
(V)
TM
T=
j
T max.
j
T = 25°C
j
Figure 5.
Surge peak on-state current versus
number of cycles
Figure 6.
Non-repetitive surge peak on-state
current for a sinusoidal
0
10
20
30
40
50
60
70
80
90
1
10
100
1000
I
(A)
TSM
Number of cycles
t=20ms
One cycle
Non repetitive
T initial=25°C
j
Repetitive
T =105°C
C
t (ms)
p
T initial=25°C
j
I
(A), I t (A s)
TSM
22
ITSM
I t
2
dI/dt limitation:
50A/µs
10
100
1000
0.01
0.10
1.00
10.00
Pulse with width t < 10 ms and corresponding value of I t
p
2



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