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T630W Datasheet(PDF) 4 Page - STMicroelectronics |
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T630W Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics T630W 4/8 Doc ID 3764 Rev 3 Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature Figure 7. Relative variation of gate trigger current, holding current and latching Figure 8. Relative variation of critical rate of decrease of main current versus reapplied (dV/dt)c (typical value) I,I ,I [T ] / GTHL j I ,I ,I [T =25°C] GTHL j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 T (°C) j IGT IH & IL Current versus junction temperature (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 (dV/dt) (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 (dI/dt)c [T ] / j (dI/dt)c [T = 125°C] j T (°C) j |
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