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C650 Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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C650 Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
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1 / 6 page  Features ■ Formerly brand ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Very high bandwidth; GHz compatible ■ Small package, minimal PCB area ■ Simple, superior circuit protection ■ RoHS compliant*, UL Recognized Applications ■ Combo voice / xDSL linecards ■ Voice linecards ■ MDF, primary protection modules ■ Process control equipment ■ Test and measurement equipment ■ General electronics TBU™ C650 and C850 Protectors *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Transient Blocking Units - TBU™ Devices Bourns® C650 and C850 series products are high speed bidirectional protection components, constructed using MOSFET semiconductor technology, designed to protect against faults caused by short circuits, AC power cross, induction and lightning surges. The TBU™ high speed protector, triggering as a function of the MOSFET, blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. The TBU™ device is provided in a surface mount DFN package and meets industry standard requirements such as RoHS and Pb Free solder reflow profiles. Electrical Characteristics (Tamb = 25 °C) C650 and C850 TBU™ protectors are bidirectional; specifications are valid in both directions. Symbol Parameter Min. Typ. Max. Unit Iop Maximum current through the device that will not cause current blocking Cx50-100-WH Cx50-180-WH Cx50-260-WH 100 180 260 mA Itrigger Typical current for the device to go from normal operating state to protected state Cx50-100-WH Cx50-180-WH Cx50-260-WH 150 220 330 mA Iout Maximum current through the device Cx50-100-WH Cx50-180-WH Cx50-260-WH 200 360 520 mA RTBU Series resistance of the TBU™ device C650-100-WH C650-180-WH C650-260-WH C850-100-WH C850-180-WH C850-260-WH 12 8 8 17 11 11 14.5 10 10 19 14 14 Ω tblock Maximum time for the device to go from normal operating state to protected state 1µs Iquiescent Current through the triggered TBU™ device with 50 Vdc circuit voltage 1mA Vreset Voltage below which the triggered TBU™ device will transition to normal operating state 14 V Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec C650-xxx-WH C850-xxx-WH 650 850 V Vrms Maximum protection voltage for continuous Vrms faults C650-xxx-WH C850-xxx-WH 300 425 V Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Agency Approval UL recognized component File # E315805. Industry Standards Description Model Telcordia GR-1089 Port Type 1, 3, 5 C650 C850 GR-974 C650 C850 ITU-T K.20, K.20E, K.21, K.21E, K.45 C850 |
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