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FCX555 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # FCX555
Description  180V High voltage PNP switching transistor in SOT89
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX555 Datasheet(HTML) 3 Page - Diodes Incorporated

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FCX555
Issue 1 - November 2005
3
www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BVCBO
-180
V
IC = -100µA
Collector-emitter
breakdown voltage
BVCEV
-180
V
IC = -1µA,
-0.3V < VBE < 1V
Collector-emitter
breakdown voltage
BVCER
-180
V
IC = -1µA, RB 1k
Emitter-base breakdown
voltage
BVEBO
-7
-8.1
V
IE= -100µA
Collector-emitter
breakdown voltage
BVCEO
-150
V
IC =-10mA(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
Collector cut-off current
ICBO
<1
-20
nA
VCB = -144V
-10
µA
VCB = -144V, TAMB = 100°C
Emitter cut-off current
IEBO
<1
-20
nA
VEB = -6V
Collector emitter saturation
voltage
VCE(SAT)
-300
mV
IC = -0.1A, IB = -10mA(*)
-400
mV
IC = -0.25A, IB = -25mA(*)
Base-emitter saturation
voltage
VBE(SAT)
-1000
mV
IC =-250mA, IB =-25mA(*)
Base-emitter turn-on
voltage
VBE(ON)
-950
mV
IC =-250mA, VCE =-5V(*)
Static forward current
transfer ratio
hFE
100
IC = -10mA, VCE = -5V(*)
100
300
IC = -100mA, VCE = -5V(*)
Transition frequency
fT
100
MHz
Ic = -50mA, VCE = -10V,
f = 100MHZ
Output capacitance
COBO
10
pF
VCB 1= -10V, f = 1MHZ(*)



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