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LB1964 Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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LB1964 Datasheet(HTML) 3 Page - Sanyo Semicon Device |
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3 / 4 page ![]() LB1964T No. 6188-3/4 Sample Application Circuit Block Diagram GND Thermal protection circuit M FG Control circuit HB HALL IN– IN+ VCC OUT1 OUT2 Delay circuit Constant voltage circuit Delay circuit *1 When a diode is used to protect the IC from destruction in case of reverse connection, the capacitor Cr must be inserted to provide a regenerative current route. Similarly, a capacitor is needed in the power supply line, even if no diode is used. *2 The Hall element is supplied with a constant-voltage bias of approx. 1.27V from the HB pin. This ensures stable output with good temperature characteristics from the Hall element. Because the LB1964T incorporates a Hall amplifier with low offset, it provides coil output with a stable duty. *3 The Hall amplifier does not have a hysteresis characteristic. The OUT1 and IN– pins are at the same phase, and by arranging the two pins next to each other, chatter during phase switching is prevented. However, if the wiring leading to the IN– pin is long, some noise interference may occur. In such a case, the following steps should be considered: (1) Arrange parts layout with priority to proximity of Hall element and IC, to allow short Hall element output wiring. (2) Insert a resistor of about 10 to 100 k Ω between OUT1 and IN– to create a hysteresis characteristic. GND VCC FG OUT1 OUT2 IN+ IN– H HB ∗1 Di Cr ∗2 ∗3 |
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