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AD8657 Datasheet(PDF) 5 Page - Analog Devices

Part # AD8657
Description  18 V, Precision, Micropower CMOS RRIO Operational Amplifier
PDF  24 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD8657 Datasheet(HTML) 5 Page - Analog Devices

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AD8657
Rev. 0 | Page 5 of 24
ELECTRICAL CHARACTERISTICS—18 V OPERATION
VSY = 18 V, VCM = VSY/2, TA = 25°C, unless otherwise specified.
Table 4.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
V
CM = 0 V to 18 V
350
µV
V
CM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +85°C
1.2
mV
V
CM = 0 V to 18 V, −40°C ≤ TA ≤ +85°C
4
mV
V
CM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +125°C
2
mV
V
CM = 0 V to 18 V, −40°C ≤ TA ≤ +125°C
11
mV
Input Bias Current
I
B
5
20
pA
−40°C ≤ T
A ≤ +125°C
2.9
nA
Input Offset Current
I
OS
40
pA
−40°C ≤ T
A ≤ +125°C
500
pA
Input Voltage Range
0
18
V
Common-Mode Rejection Ratio
CMRR
V
CM = 0 V to 18 V
95
110
dB
V
CM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +85°C
83
dB
V
CM = 0 V to 18 V, −40°C ≤ TA ≤ +85°C
74
dB
V
CM = 0.3 V to 17.7 V, −40°C ≤ TA ≤ +125°C
80
dB
V
CM = 0 V to 18 V, −40°C ≤ TA ≤ +125°C
67
dB
Large Signal Voltage Gain
A
VO
R
L = 100 kΩ, VO = 0.5 V to 17.5 V
110
120
dB
−40°C ≤ T
A ≤ +85°C
105
dB
−40°C ≤ T
A ≤ +125°C
73
dB
Offset Voltage Drift
ΔV
OS/ΔT
2
μV/°C
Input Resistance
R
IN
10
GΩ
Input Capacitance, Differential Mode
C
INDM
3.5
pF
Input Capacitance, Common Mode
C
INCM
10.5
pF
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C
17.97
V
Output Voltage Low
V
OL
R
L = 100 kΩ to VCM, −40°C ≤ TA ≤ +125°C
30
mV
Short-Circuit Current
I
SC
±12
mA
Closed-Loop Output Impedance
Z
OUT
f = 1 kHz, A
V = 1
15
Ω
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
V
SY = 2.7 V to 18 V
105
125
dB
−40°C ≤ T
A ≤ +125°C
70
dB
Supply Current per Amplifier
I
SY
I
O = 0 mA
18
22
µA
−40°C ≤ T
A ≤ +125°C
33
µA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L = 1 MΩ, CL = 10 pF, AV = 1
70
V/ms
Settling Time to 0.1%
t
s
V
IN = 1 V step, RL = 100 kΩ, CL = 10 pF
12
µs
Gain Bandwidth Product
GBP
R
L = 1 MΩ, CL = 10 pF, AV = 1
200
kHz
Phase Margin
Φ
M
R
L = 1 MΩ, CL = 10 pF, AV = 1
60
Degrees
Channel Separation
CS
f = 10 kHz, R
L = 1 MΩ
105
dB
EMI Rejection Ratio of +IN x
EMIRR
V
IN = 100 mVPEAK, f = 400 MHz, 900 MHz,
1800 MHz, 2400 MHz
90
dB
NOISE PERFORMANCE
Voltage Noise
e
n p-p
f = 0.1 Hz to 10 Hz
5
µV p-p
Voltage Noise Density
e
n
f = 1 kHz
50
nV/√Hz
f = 10 kHz
45
nV/√Hz
Current Noise Density
i
n
f = 1 kHz
0.1
pA/√Hz



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