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MIC2172 Datasheet(PDF) 13 Page - Micrel Semiconductor |
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MIC2172 Datasheet(HTML) 13 Page - Micrel Semiconductor |
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13 / 20 page ![]() Micrel MIC2172/3172 April 2006 13 M9999-041806 (408) 955-1690 clamp to the COMP output (figure 9). This feature can be useful in applications requiring either a complete shutdown of Q1’s switching action or a form of current fold-back limiting. This use of the COMP output does not disable the oscillator, amplifiers or other circuitry, therefore the supply current is never less than approximately 5mA. Thermal Management Although the MIC2172/3172 family contains thermal protection circuitry, for best reliability, avoid prolonged operation with junction temperatures near the rated maximum. The junction temperature is determined by first calculating the power dissipation of the device. For the MIC2172/3172, the total power dissipation is the sum of the device operating losses and power switch losses. The device operating losses are the dc losses associated with biasing all of the internal functions plus the losses of the power switch driver circuitry. The dc losses are calculated from the supply voltage (VIN) and device supply current (IQ). The MIC2172/3172 supply current is almost constant regardless of the supply voltage (see “Electrical Characteristics”). The driver section losses (not including the switch) are a function of supply voltage, power switch current, and duty cycle. () () ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ + + = + 50 δ 0.004 I V I V P SW IN Q IN driver bias where: P(bias+driver) = device operating losses VIN = supply voltage IQ = quiescent supply current ISW = power switch current (see “Design Hints: Switch Current Calculations”) δ = duty cycle F OUT IN F OUT V V V V V δ + ± + = VOUT = output voltage VF = D1 forward voltage drop As a practical example refer to figure 1. VIN = 5.0V IQ = 0.006A ISW = 0.625A δ = 60% (0.6) Then: () () () 0.068W P 50 0.6 0.004 0.625 5 0.006 5 P driver bias driver bias = ⎥ ⎦ ⎤ ⎢ ⎣ ⎡ ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ + + × = + + Power switch dissipation calculations are greatly simplified by making two assumptions which are usually fairly accurate. First, the majority of losses in the power switch are due to on-losses. To find these losses, assign a resistance value to the collector/emitter terminals of the device using the saturation voltage versus collector current curves (see Typical Performance Characteristics). Power switch losses are calculated by modeling the switch as a resistor with the switch duty cycle modifying the average power dissipation. PSW = (ISW) 2 R SW δ From the Typical performance Characteristics: RSW = 1Ω Then: PSW = (0.625) 2 × 1 × 0.6 PSW = 0.234W P(total) = 0.068 + 0.234 P(total) = 0.302W The junction temperature for any semiconductor is calculated using the following: TJ = TA + P(total) θJA Where: TJ = junction temperature TA = ambient temperature (maximum) P(total) = total power dissipation θ JA = junction to ambient thermal resistance For the practical example: TA = 70 °C θ JA = 130 °C/W (for plastic DIP) Then: TJ = 70 + 0.30 ⋅ 130 TJ = 109 °C This junction temperature is below the rated maximum of 150 °C. Grounding Refer to figure 10. Heavy lines indicate high current paths. |
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