STAR1000 datasheet(3/24 Pages) CYPRESS

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STAR1000

Document Number: 38-05714 Rev. *F

Page 3 of 24

Sensor Specifications

General Specifications

Table 1. General Specifications of STAR1000 Sensor

Electro-optical Specifications

Parameter

Specification

Comment

Detector technology

CMOS active pixel sensor

Pixel structure

3-transistor active pixel

Radiation-tolerant pixel design.

Photodiode

High fill factor photodiode

Using N-well technique.

Sensitive area format

1024 x 1024 pixels

Pixel size

15 x15

μm2

Pixel output rate

12 MHz

Speed can be altered for power consumption.

Windowing

X- and Y- addressing random programmable

Electronic shutter

Electronic rolling shutter.

Range - 1:1024

Integration time is variable in time steps equal to the

row readout time.

Total dose radiation

tolerance

> 250 Krad (Si)

Pixel test structures with a similar design have

shown total dose tolerance up to several Mrad.

Note: Dark current and DSNU are dependent of

radiation dose.

Proton radiation tolerance 2,4.1011 proton/cm2

At 60 MeV

SEU tolerance

> 127,8 MeV cm3 mg-1

Table 2. Electro-optical Specifications of STAR1000 Sensor

Parameter

Value

Comment

Typical Value

Unit

Spectral range

400-1000

Quantum efficiency x fill

factor

20%

Average over the visual range. See spectral

response curve.

Full well capacity

135.000

Saturation capacity to

meet non-linearity within

+ 5%

99.000

Output signal swing

1.1

Conversion gain

11.4

μV/e-

kTC noise

Dynamic range

Fixed pattern noise

Local: 1

σ < 0.30%

Global: 1

σ <0.56%

of full well

Photo response

non-uniformity at Sat/

2 (RMS)

Local: 1

σ < 0.67%

Global:

σ <3.93%

of full well

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