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HT68F03 Datasheet(PDF) 24 Page - Holtek Semiconductor Inc

Part # HT68F03
Description  Small Package Enhanced Flash Type 8-Bit MCU with EEPROM
PDF  147 Pages
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Manufacturer  HOLTEK [Holtek Semiconductor Inc]
Direct Link  http://www.holtek.com
Logo HOLTEK - Holtek Semiconductor Inc

HT68F03 Datasheet(HTML) 24 Page - Holtek Semiconductor Inc

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HT66F03/HT66F04/HT68F03/HT68F04
Rev. 1.30
24
February 17, 2011
Programmer Pin
MCU Pins
RES
PA7
DATA
PA0
CLK
PA2
Programmer and MCU Pins
RAM Data Memory
The Data Memory is a volatile area of 8-bit wide RAM in-
ternal memory and is the location where temporary in-
formation is stored.
Structure
Divided into two sections, the first of these is an area of
RAM, known as the Special Function Data Memory.
Here are located registers which are necessary for cor-
rect operation of the device. Many of these registers can
be read from and written to directly under program con-
trol, however, some remain protected from user manipu-
lation.
Device
Capacity
Bank 0
Bank 1
HT66F03
HT68F03
64
´8
40H~7FH
40H (EEC)
available only
HT66F04
HT68F04
96
´8
40H~9FH
40H (EEC)
available only
The second area of Data Memory is known as the Gen-
eral Purpose Data Memory, which is reserved for gen-
eral purpose use. All locations within this area are read
and write accessible under program control.
The overall Data Memory is subdivided into two banks
for all the devices. The Special Purpose Data Memory
registers are accessible in all banks, with the exception
of the EEC register at address 40H, which is only acces-
sible in Bank 1. Switching between the different Data
Memory banks is achieved by setting the Bank Pointer
to the correct value. The start address of the Data Mem-
ory for all devices is the address 00H.
*
*
*
W r i t e r _ V D D
R E S
D A T A
C L K
W r i t e r _ V S S
T o o t h e r C i r c u i t
D A T A
C L K
V S S
R E S
V D D
W r i t e r C o n n e c t o r
S i g n a l s
M C U P r o g r a m m i n g
P i n s
Note:
* may be resistor or capacitor. The resistance
of * must be greater than 1k
W or the capacitance
of * must be less than 1nF.
0 0 H
0 1 H
0 2 H
0 3 H
0 4 H
0 5 H
0 6 H
0 7 H
0 8 H
0 9 H
0 A H
0 B H
0 C H
0 D H
0 E H
0 F H
1 0 H
1 1 H
1 2 H
1 3 H
1 4 H
1 5 H
1 6 H
1 7 H
1 8 H
1 9 H
1 A H
1 B H
1 C H
1 D H
1 E H
1 F H
I A R 0
M P 0
I A R 1
M P 1
B P
A C C
P C L
T B L P
T B L H
T B H P
S T A T U S
S M O D
L V D C
I N T E G
I N T C 0
I N T C 1
I N T C 2
M F I 0
U n u s e d
M F I 2
P A
P A C
P A P U
P A W K U P
P R M
U n u s e d
W D T C
T B C
U n u s e d
U n u s e d
E E A
E E D
2 0 H
2 1 H
2 2 H
2 3 H
2 4 H
2 5 H
2 6 H
2 7 H
2 8 H
2 9 H
2 A H
2 B H
2 C H
2 D H
2 E H
2 F H
3 0 H
3 1 H
3 2 H
3 3 H
3 4 H
3 5 H
3 6 H
3 7 H
3 8 H
3 9 H
3 A H
3 B H
3 C H
3 D H
3 E H
3 F H
A D R L
A D R H
A D C R 0
A D C R 1
A C E R L
C P C
U n u s e d
U n u s e d
T M 0 C 0
T M 0 C 1
T M 0 D L
T M 0 D H
T M 0 A L
T M 0 A H
T M 1 C 0
T M 1 C 1
T M 1 D L
T M 1 D H
T M 1 A L
T M 1 A H
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
U n u s e d
B a n k 0 & B a n k 1
B a n k 0 & B a n k 1
HT66F03 Special Purpose Data Memory



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