NXP Semiconductors

Product specification

N-channel dual gate MOS-FETs

BF904; BF904R

FEATURES

• Specially designed for use at 5 V supply voltage

• Short channel transistor with high transfer admittance to

input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications with 3 to 7 V supply voltage

such as television tuners and professional

communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic

microminiature SOT143B and SOT143R package. The

transistor consists of an amplifier MOS-FET with source

and substrate interconnected and an internal bias circuit to

ensure good cross-modulation performance during AGC.

PINNING

CAUTION

This product is supplied in anti-static packing to

prevent damage caused by electrostatic discharge

during transport and handling. For further information,

refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A

and SNW-FQ-302B.

PIN

SYMBOL

DESCRIPTION

1

s, b

source

2

d

drain

gate 2

gate 1

Fig.1 Simplified outline (SOT143B) and symbol.

BF904 marking code:

%MC.

handbook, halfpage

43

2

1

Top view

MAM124

s,b

d

g

1

g

2

Fig.2 Simplified outline (SOT143R) and symbol.

BF904R marking code:

%MD.

handbook, halfpage

Top view

MAM125 - 1

s,b

d

g

1

g

2

34

1

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

7V

drain current

−−

30

mA

total power dissipation

−−

200

mW

operating junction temperature

−−

150

°C

forward transfer admittance

22

25

30

mS

input capacitance at gate 1

−

2.2

2.6

pF

reverse transfer capacitance

f = 1 MHz

−

25

35

fF

F

noise figure

f = 800 MHz

−

2

−

dB

Rev. 06 - 13 November 2007

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