2010-05-20

1

BFR360F

3

1

2

NPN Silicon RF Transistor

• Low noise amplifier for low current applications

• Collector design supports 5V supply voltage

• For oscillators up to 3.5 GHz

• Low noise figure 1.0 dB at 1.8 GHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR360F

FBs

1 = B

2 = E

3 = C

TSFP-3

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

6

V

Collector-emitter voltage

15

Collector-base voltage

15

Emitter-base voltage

2

Collector current

35

mA

Base current

4

210

mW

Junction temperature

150

°C

Storage temperature

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 250

K/W