BUJ303AX

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Product data sheet

Rev. 05 — 3 May 2011

5 of 14

NXP Semiconductors

BUJ303AX

NPN power transistor

5.

Thermal characteristics

6.

Isolation characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

heatsink

with heatsink compound ;

see Figure 5

--3.95

K/W

thermal resistance from junction to

ambient

in free air

-

55

-

K/W

Fig 5.

Transient thermal impedance from junction to heatsink as a function of pulse duration

003aag067

1

10

(K/W)

1

10

T

t

T

δ =

δ = 0.5

0.2

0.1

0.05

0.02

0

Table 6.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RMS isolation voltage

50 Hz

from all terminals to external heatsink; clean

and dust free

-

-

2500

V

isolation capacitance

from collector to external heatsink ;

-10

-

pF