BUJ303AX datasheet(6/14 Pages) NXP

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BUJ303AX

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Product data sheet

Rev. 05 — 3 May 2011

6 of 14

NXP Semiconductors

BUJ303AX

NPN power transistor

Characteristics

[1]

Measured with half-sine wave voltage (curve tracer).

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ICES

collector-emitter cut-off

current

VBE =0V; VCE = 1000 V; Th =25 °C

[1]

--1

VBE =0V; VCE = 1000 V; Tj =125 °C

[1]

--2

ICBO

collector-base cut-off current VCB =1000V; IE =0A; Th =25°C

[1]

--1

ICEO

collector-emitter cut-off

current

VCE =500 V; IB =0A; Th =25°C

[1]

--0.1

IEBO

emitter-base cut-off current

VEB =9V; IC =0A; Th = 25 °C

--0.1

VCEOsus

collector-emitter sustaining

voltage

IB =0A; IC =10mA; LC =25mH;

Th = 25 °C; see Figure 6; see Figure 7

500

VCEsat

collector-emitter saturation

voltage

IC =3A; IB = 0.6 A; Th =25 °C;

see Figure 8; see Figure 9

0.25

1.5

VBEsat

base-emitter saturation

voltage

IC =3A; IB = 0.6 A; Th =25 °C;

see Figure 10

0.97

1.3

hFE

DC current gain

IC =5mA; VCE =5V; Th =25°C;

see Figure 11

IC = 500 mA; VCE =5V; Th =25 °C;

see Figure 11

hFEsat

DC saturation current gain

IC = 2.5 A; VCE =5V; Th =25°C;

see Figure 11

13.5

IC =3A; VCE =5V; Th =25 °C;

see Figure 11

-12

Dynamic characteristics

ton

turn-on time

IC = 2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; VBB =-4V; Th =25°C;

resistive load; see Figure 12;

see Figure 13

-0.5

0.7

µs

storage time

3.3

µs

IC = 2.5 A; IBon = 0.5 A; VBB =-5V;

LB =1µH; Th = 25 °C; inductive load;

see Figure 14; see Figure 15

-1.4

1.6

µs

IC = 2.5 A; IBon = 0.5 A; VBB =-5V;

LB =1µH; Tj = 100 °C; inductive load;

see Figure 14; see Figure 15

-1.7

1.9

µs

fall time

IC = 2.5 A; IBon = 0.5 A; IBoff =-0.5A;

RL =75 Ω; VBB =-4V; Th =25°C;

resistive load; see Figure 12;

see Figure 13

0.33

0.45

µs

IC = 2.5 A; IBon = 0.5 A; VBB =-5V;

LB =1µH; Th =25°C; see Figure 14;

see Figure 15

145

160

IC = 2.5 A; IBon = 0.5 A; VBB =-5V;

LB =1µH; Tj = 100 °C; inductive load;

see Figure 14; see Figure 15

160

200

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