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PMEG2005ELD Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMEG2005ELD Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 14 page ![]() PMEG2005ELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 4 May 2011 3 of 14 NXP Semiconductors PMEG2005ELD 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 5. Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Tj =25 °C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 20 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz Tamb ≤ 85 °C [1] -0.5 A Tsp ≤ 130 °C- 0.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ≤ 0.25 - 2.5 A IFSM non-repetitive peak forward current square wave; tp =8ms [2] -3 A Ptot total power dissipation Tamb ≤ 25 °C [3] -340 mW [1] -660 mW [4] - 1000 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C |
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