PMEG2005ELD datasheet(6/14 Pages) NXP

6 / 14 page

PMEG2005ELD

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 4 May 2011

6 of 14

NXP Semiconductors

PMEG2005ELD

20 V, 0.5 A low VF MEGA Schottky barrier rectifier

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

[2]

When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA.

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

[1]

IF = 0.1 mA

115

180

IF = 1 mA

175

240

IF = 10 mA

240

290

IF = 100 mA

320

380

IF = 500 mA

450

500

reverse current

VR =10V

μA

diode capacitance

VR =1V; f=1MHz

trr

reverse recovery

time

[2] -7

-ns

(1) Tj = 150 °C

(2) Tj = 125 °C

(3) Tj =85 °C

(4) Tj =25 °C

(5) Tj = −40 °C

(1) Tj = 125 °C

(2) Tj =85 °C

(3) Tj =25 °C

(4) Tj = −40 °C

Fig 5.

Forward current as a function of forward

voltage; typical values

Fig 6.

Reverse current as a function of reverse

voltage; typical values

006aac572

10–2

10–3

10–1

(A)

10–4

VF (V)

0.8

0.6

0.2

0.4

(1)

(2)

(3)

(4)

(5)

006aac573

10–2

10–3

10–4

10–5

10–6

10–7

10–8

(A)

10–9

VR (V)

020

510

(1)

(2)

(3)

(4)

PMEG2005ELD Datasheet(PDF) 6 Page - NXP Semiconductors

PMEG2005ELD Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL