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PMEG2005ELD Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMEG2005ELD Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 14 page ![]() PMEG2005ELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 4 May 2011 7 of 14 NXP Semiconductors PMEG2005ELD 20 V, 0.5 A low VF MEGA Schottky barrier rectifier f=1MHz; Tamb =25 °C Fig 7. Diode capacitance as a function of reverse voltage; typical values Tj = 150 °C (1) δ =0.1 (2) δ =0.2 (3) δ =0.5 (4) δ =1 Tj = 125 °C (1) δ =1 (2) δ =0.9 (3) δ =0.8 (4) δ =0.5 Fig 8. Average forward power dissipation as a function of average forward current; typical values Fig 9. Average reverse power dissipation as a function of reverse voltage; typical values VR (V) 020 15 510 006aac574 20 30 10 40 50 Cd (pF) 0 006aac575 IF(AV) (A) 0.00 0.75 0.50 0.25 0.2 0.1 0.3 0.4 PF(AV) (W) 0.0 (1) (2) (3) (4) VR (V) 020 15 510 006aac576 0.050 0.025 0.075 0.100 PR(AV) (W) 0.000 (1) (2) (3) (4) |
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