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MMBT4403 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBT4403 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  1 2 3 COLLECTOR 3 1 BASE 2 EMITTER http://www.SeCoSGmbH.com Elektronische Bauelemente K J C H L A B S G V 3 1 2 D Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 MMBT4403 Any changing of specification will not be informed individual PNP Silicon Switching Transistor 01-Jun-2004 Rev. B Page 1 of 4 MARKING: 2T MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Dissipation 0.3 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V , IE=0 -0.1 μ A Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 μ A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 μ A DC current gain hFE VCE=-2 V, IC= -150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-150 mA, IB=-15mA -0.4 V Base-emitter saturation voltage VBE(sat) IC=- 150 mA, IB=-15mA -0.95 V Transition frequency f T VCE= -10V, IC= -20mA f = 100MHz 200 MHz RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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