MMBT4403 datasheet(3/4 Pages) SECOS

3 / 4 page

Any changing of specification will not be informed individual

MMBT4403

PNP Silicon

Switching Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2004 Rev. B

Page 3 of 4

0.1

2.0 5.0

10 20

1.0

0.5

0.2

0.01 0.02 0.05

100

Figure 8. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE

VCE = −10 Vdc, TA = 25

°C; Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 430 W

IC = 500 mA, RS = 560 W

IC = 50 mA, RS = 2.7 kW

IC = 100 mA, RS = 1.6 kW

RS = OPTIMUM SOURCE RESISTANCE

100

200

500

10k 20k

50k

Figure 9. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 255C

This group of graphs illustrates the relationship between hfe and other ªhº parameters for this series of transistors. T o obtain

these curves, a high-gain and a low-gain unit were selected from the MMBT4403 lines, and the same units were used to

develop the correspondingly numbered curves on each graph.

Figure 10. Current Gain

IC, COLLECTOR CURRENT (mAdc)

0.1

0.2

0.5 0.7 1.0

2.0

3.0

0.3

300

700

200

100

1000

Figure 11. Input Impedance

IC, COLLECTOR CURRENT (mAdc)

100 k

100

5.0 7.0

20 k

10 k

5 k

2 k

1 k

0.1

0.2

0.5 0.7 1.0

2.0

3.0

0.3

5.0 7.0

Figure 12. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mAdc)

0.1

0.2

0.5 0.7 1.0

2.0 3.0

0.3

0.1

Figure 13. Output Admittance

IC, COLLECTOR CURRENT (mAdc)

500

1.0

5.0 7.0

5.0

2.0

5.0

2.0

1.0

0.5

0.2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

0.1

0.2

0.5 0.7 1.0

2.0 3.0

0.3

5.0 7.0

500

50 k

500

200

100

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

MMBT4403 UNIT 1

MMBT4403 UNIT 2

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