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MMDT2227 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMDT2227 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 6 page  Any changing of specification will not be informed individual MMDT2227 NPN-PNP Silicon Multi-Chip Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente * Features Power dissipation PCM : 0.2 W (Tamp.= 25 C) Collector current ICM : 0.2/-0.2 A Collector-base voltage V(BR)CBO : 75/-60 V Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O O Electrical Characteristics( Tamb=25OC unless otherwise specified) C 2 B 1 E 1 E 2 B 2 C 1 NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1 0μA,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=1 0μA,IC=0 6 V Collector cut-off current ICBO VCB= 60V,IE=0 10 nA Emitter cut-off current IEBO VEB=3V,IC=0 10 nA DC current gain hFE VCE=10V,IC= 150mA 100 300 VCE(sat)1 IC=1 50mA,IB=15mA 0.3 V Collector-emitter saturation voltage VCE(sat)2 IC= 500mA,IB=50mA 1 V VBE(sat)1 IC=1 50mA,IB=15mA 1.2 V Base -emitter saturation voltage VBE(sat)2 IC= 500mA,IB=50mA 2 V Transition frequency fT VCE= 20V,IC=20mA,f=100MHz 300 MHz Collector output capacitance Cob VCB= 10V,IE=0,f=1MHz 8 pF Noise Figure NF VCE= 10V,Ic=0.1mA, f= 1KHZ,Rs=1KΩ 4 dB 01-Jan-2006 Rev. B Page 1 of 6 SOT-363 Dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026TYP (0.65TYP) .096(2.45) .085(2.15) .021REF (0.525)REF .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 |
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