MMDT2227 datasheet(2/6 Pages) SECOS

2 / 6 page

Any changing of specification will not be informed individual

MMDT2227

NPN-PNP Silicon

Multi-Chip Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

PNP2907A

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-1

0μA,IE=0

-60

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-

10mA,IB=0

-60

Emitter-base breakdown voltage

V(BR)EBO

IE=-10μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-5

0V,IE=0

-10

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-10

DC current gain

hFE

VCE=-10V,IC=-

150mA

100

300

VCE(sat)1

IC=-1

50mA,IB=-15mA

-0.4

Collector-emitter saturation voltage

VCE(sat)2

IC=-

500mA,IB=-50mA

-1.6

VBE(sat)1

IC=-1

50mA,IB=-15mA

-1.3

Base -emitter saturation voltage

VBE(sat)2

IC=-

500mA,IB=-50mA

-2.6

Transition frequency

VCE=-

20V,IC=-50mA,f=100MHz

200

MHz

Collector output capacitance

Cob

VCB=-

10V,IE=0,f=1MHz

Figure 1. Turn–On Time

Figure 2. Turn–Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

–2 V

< 2 ns

1.0 to 100

µs,

Duty Cycle

≈ 2.0%

1 k

Ω

+ 30 V

200

CS* < 10 pF

+16 V

–14 V

< 20 ns

1.0 to 100

µs,

Duty Cycle

≈ 2.0%

1 k

+ 30 V

200

CS* < 10 pF

–4 V

1N914

01-Jan-2006 Rev. B

Page 2 of 6

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