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FMP06N60ES Datasheet(PDF) 2 Page - Fuji Electric |
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FMP06N60ES Datasheet(HTML) 2 Page - Fuji Electric |
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2 / 5 page ![]() 2 FMP06N60ES 2 FUJI POWER MOSFET 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) Tc [°C] 0 4 8 12 16 20 24 0 5 10 15 6.5V VGS=6.0V VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 7.0V 8.0V 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 100 0.1 1 10 100 ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 2 4 6 8 10 12 14 0.8 1.0 1.2 1.4 1.6 1.8 2.0 6.5V ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 8V 20V 7V VGS=6.0V 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform VDS [V] Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 1ms 100µs |
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