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FMP06N60ES Datasheet(PDF) 3 Page - Fuji Electric

Part # FMP06N60ES
Description  N-CHANNEL SILICON POWER MOSFET
PDF  5 Pages
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FMP06N60ES Datasheet(HTML) 3 Page - Fuji Electric

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33
FUJI POWER MOSFET
FMP06N60ES
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
typ.
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
Tch [°C]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
0
5
10 15 20 25 30 35 40 45 50 55 60
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25 °C
480V
300V
Vcc= 120V
10
-2
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
10
4
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
100
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω
td(on)
tr
tf
td(off)
ID [A]



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