For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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11 - 129

Outline Drawing

Absolute Maximum Ratings

Drain Bias Voltage (Vdd

1

= Vdd

2

)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +5Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T = 85 °C)

(derate 12.4 mW/°C above 85 °C)

1.1 W

Thermal Resistance

(channel to ground paddle)

80 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd

1

= Vdd

2

(V)

Idd

1

= Idd

2

(mA)

+4.5

111

+5.0

114

+5.5

116

Note: Amplifier will operate over full voltage range shown above

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50

MICROINCHES MINIMUM NICKEL

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

Typical Supply Current vs. Vdd

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

HMC451LC3

v04.1208

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 5 - 20 GHz