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HMC495LP3 Datasheet(PDF) 10 Page - Hittite Microwave Corporation

Part # HMC495LP3
Description  SiGe WIDEBAND DIRECT MODULATOR RFIC, 250 - 3800 MHz
PDF  12 Pages
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC495LP3 Datasheet(HTML) 10 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pin Descriptions (continued)
Pin Number
Function
Description
Interface Schematic
13
Vcc1
Supply voltage for the mixer and output stages.
Set to 3.3V for nominal operation. The nominal
current for this port is 37 mA.
14, 15
Ip, In
Differential In-Phase baseband input. These are high
impedance ports. The nominal recommended bias voltage
is between 1.0 - 1.15V.The nominal recommened baseband
input voltage is 800 mV peak to peak differential. By
adjusting the DC bias voltage on ports In & Ip, the Carrier
Suppression of the device can be optimized for a specific
frequency band and LO power level. The typical offset
voltage for optimization is less than 5 mV.
The amplitude and phase difference between the I and Q
inputs can be adjusted in order to optimize the Sideband
Suppression for a specific frequency band
and LO power level.
16
Vcc2
Supply voltage for the LO stage. Set to 3.3V for nominal
operation. The nominal current for this port is 64 mA.
SiGe WIDEBAND DIRECT
MODULATOR RFIC, 250 - 3800 MHz
v02.0705
HMC495LP3 / 495LP3E



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