SIR402DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 68683

S09-1087-Rev. C, 15-Jun-09

www.vishay.com

Vishay Siliconix

SiR402DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =10 V thru 4 V

VGS =2 V

VGS =3 V

0.002

0.004

0.006

0.008

0.010

1020

3040

5060

ID - Drain Current (A)

VGS =4.5 V

VGS =10 V

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =24 V

ID =20A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

300

600

900

1200

1500

1800

2100

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

ID =20A

VGS =10 V,4.5 V

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