SIR402DP datasheet(4/13 Pages) VISHAY

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Document Number: 68683

S09-1087-Rev. C, 15-Jun-09

Vishay Siliconix

SiR402DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

100

TJ = 25 °C

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (Junction-to-Ambient)

0.000

0.003

0.006

0.009

0.012

0.015

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =20A

0.001

600

0.1

Time (s)

100

0.01

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

1ms

10 ms

100 ms

10 s

Limited byRDS(on)*

BVDSS

Limited

100 µs

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