BLF642

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 2 — 22 July 2011

4 of 12

NXP Semiconductors

BLF642

Broadband power LDMOS transistor

8.

Test information

8.1 RF performance

The following figures are measured in a class-AB production test circuit.

8.1.1 1-Tone CW

Fig 1.

Power gain and drain efficiency as function of

load power; typical values

Fig 2.

Power gain as a function of load power;

typical values

050

40

20

30

10

001aan775

40

20

60

80

(%)

0

18

16

20

22

(dB)

14

050

40

20

30

10

001aan776

(1)

(2)

(3)

(4)

(5)

(6)

(7)

18

16

20

22

(dB)

14