BLF642 datasheet(3/12 Pages) PHILIPS

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BLF642

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Product data sheet

Rev. 2 — 22 July 2011

3 of 12

NXP Semiconductors

BLF642

Broadband power LDMOS transistor

Characteristics

Application information

7.1 Ruggedness in class-AB operation

The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load

power.

Table 6.

Characteristics per section

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.5 mA

VGS(th)

gate-source threshold voltage

VDS = 32 V; ID = 50 mA

1.4

1.9

2.4

VGSq

gate-source quiescent voltage

VDS =32V; IDq = 250 mA

1.5

2.0

2.5

IDSS

drain leakage current

VGS =0V; VDS =32V

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

8.0

9.0

IGSS

gate leakage current

VGS = 10 V; VDS =0V

gfs

forward transconductance

VDS =10V; ID = 2.5 A

3.3

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =1.75A

-300



Ciss

input capacitance

VGS = 0 V; VDS =32V;

f=1MHz

-39

Coss

output capacitance

VGS = 0 V; VDS =32V;

f=1MHz

-15

Crs

feedback capacitance

VGS = 0 V; VDS =32V;

f=1MHz

-0.84

Table 7.

RF performance in a common-source class-AB circuit

Th =25 C; IDq = 0.2 A.

Mode of operation

VDS



(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

1300

> 18

> 59

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