BSP320 datasheet(1/8 Pages) SIEMENS

Part #	BSP320

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

PDF	8 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

29/01/1998

BSP 320 S

SIPMOS ® Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• VGS(th)= 2.1 ... 4.0 V

Pin 1

Pin 2

Pin 3

Pin 4

G

D

S

D

Type

VDS

ID

RDS(on)

Package

Marking

Ordering Code

BSP 320 S

60 V

2.9 A

0.12

Ω

SOT-223

Q67000-S4001

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

TA = 25 °C

TA = 100 °C

ID

1.85

2.9

A

DC drain current, pulsed

TA = 25 °C

IDpuls

11.6

Avalanche energy, single pulse

ID = 2.9 A, VDD = 25 V, RGS = 25 Ω

L

= 14.3 mH, Tj = 25 °C

EAS

60

mJ

Avalanche energy, periodic limited by Tj(max)

EAR

0.18

Avalanche current, repetitive,limited by Tj(max)

IAR

2.9

A

Reverse diode dv/dt

IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs

Tjmax = 150 °C

dv/dt

6

KV/µs

Gate source voltage

VGS

± 20

V

Power dissipation

TA = 25 °C

Ptot

1.8

W

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BSP320 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

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