BSP320 datasheet(3/8 Pages) SIEMENS

Part #	BSP320

Description	SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 8 page

Semiconductor Group

29/01/1998

BSP 320 S

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 2.9 A

gfs

2.5

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

275

340

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

120

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

td(on)

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

td(off)

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.9 A

RG = 33 Ω

Gate charge at threshold

VDD = 40 V, ID = 0.1 A, VGS 0 to 1 V

Qg(th)

0.24

0.3

Gate Charge at 7.0 V

VDD = 40 V, ID = 2.9 A, VGS 0 to 7 V

Qg(7)

7.4

9.3

Gate Charge total

VDD = 40 V, ID = 2.9 A, VGS 0 to 10 V

Qg(total)

9.7

Gate plateau voltage

VDS = 15 V, ID = 2.9 A

V(plateau)

4.7

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