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MP6M14 Datasheet(PDF) 3 Page - Rohm |
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MP6M14 Datasheet(HTML) 3 Page - Rohm |
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3 / 11 page  www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet MP6M14 Electrical characteristics (Ta = 25 C) <Tr2(Pch)> Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS 30 - - V ID=1mA, VGS=0V Zero gate voltage drain current IDSS - 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA -27 38 ID=6.0A, VGS=10V -40 56 ID=3.0A, VGS=4.5V -46 64 ID=3.0A, VGS=4.0V Forward transfer admittance l Yfs l 4.0 - - S VDS=10V, ID=6.0A Input capacitance Ciss - 1040 - pF VDS=10V Output capacitance Coss - 160 - pF VGS=0V Reverse transfer capacitance Crss - 135 - pF f=1MHz Turn-on delay time td(on) -9 - ns VDD 15V, ID=3.0A Rise time tr - 15 - ns VGS=10V Turn-off delay time td(off) - 96 - ns RL=5 Fall time tf - 52 - ns RG=10 Total gate charge Qg - 10.4 - nC VDD 15V, ID=6.0A Gate-source charge Qgs - 2.8 - nC VGS=5V Gate-drain charge Qgd - 3.7 - nC *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage VSD -- 1.2 V Is=6.0A, VGS=0V *Pulsed Parameter Conditions Conditions m Static drain-source on-state resistance RDS (on) Parameter * * * * * * * * * * * * * * * * 3/10 2011.10 - Rev.A |
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