VT6M1 datasheet(2/9 Pages) ROHM

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Data Sheet

VT6M1



Electrical characteristics (Ta = 25

C)

<Tr1(Nch)>

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

10

AVGS=±8V, VDS=0V

Drain-source breakdown voltage V (BR)DSS

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

AVDS=20V, VGS=0V

Gate threshold voltage

VGS (th)

0.3

1.0

VDS=10V, ID=100A

2.5

3.5

ID=100mA, VGS=4.5V

3.0

4.2

ID=100mA, VGS=2.5V

3.8

5.3

ID=50mA, VGS=1.8V

4.5

9.0

ID=20mA, VGS=1.5V

6.0

18.0

ID=10mA, VGS=1.2V

Forward transfer admittance

l Yfs l

180

mS VDS=10V, ID=100mA

Input capacitance

Ciss

7.1

VDS=10V

Output capacitance

Coss

3.3

VGS=0V

Reverse transfer capacitance

Crss

1.7

f=1MHz

Turn-on delay time

td(on)

-5

VDD 10V, ID=50mA

Rise time

-4

VGS=4.5V

Turn-off delay time

td(off)

RL=200RG=10

Fall time

-38

*Pulsed



Body diode characteristics (Source-Drain)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

VSD

1.2

Is=100mA, VGS=0V

*Pulsed

Parameter

Conditions

Parameter

Static drain-source on-state

resistance

RDS (on)



2/8

2011.09 - Rev.A

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