VT6M1 datasheet(3/9 Pages) ROHM

3 / 9 page

www.rohm.com

Data Sheet

VT6M1



Electrical characteristics (Ta = 25

C)

<Tr2(Pch)>

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

10

AVGS=10V, VDS=0V

Drain-source breakdown voltage V (BR)DSS

20

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

1

AVDS=20V, VGS=0V

Gate threshold voltage

VGS (th)

0.3

1.0

VDS=10V, ID=100A

2.5

3.8

ID=100mA, VGS=4.5V

3.4

5.1

ID=50mA, VGS=2.5V

4.8

8.2

ID=20mA, VGS=1.8V

6.0

13.2

ID=10mA, VGS=1.5V

13.3

53.2

ID=1mA, VGS=1.2V

Forward transfer admittance

l Yfs l

120

mS VDS=10V, ID=100mA

Input capacitance

Ciss

15.0

VDS=10V

Output capacitance

Coss

4.0

VGS=0V

Reverse transfer capacitance

Crss

1.5

f=1MHz

Turn-on delay time

td(on)

VDD 10V, ID=50mA

Rise time

VGS=4.5V

Turn-off delay time

td(off)

325

RL=200RG=10

Fall time

137

*Pulsed



Body diode characteristics (Source-Drain)

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

VSD

1.2

Is=100mA, VGS=0V

*Pulsed

Parameter

Conditions



Static drain-source on-state

resistance

RDS (on)

Parameter

3/8

2011.09 - Rev.A

VT6M1 Datasheet(PDF) 3 Page - Rohm

VT6M1 Datasheet(HTML) 3 Page - Rohm

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL