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WFD2N60 Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFD2N60 Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Rev.A Oct.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. W W W WFD FD FD FD2 2 2 2N N N N6 6 6 60 0 0 0 S S S Siiiilllliiiic c c co o o on n n n N N N N----Ch Ch Ch Cha a a an n n nn n n nel el el el M M M MOS OS OS OSF F F FET ET ET ET Features ■ 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 15.3nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 600 V ID Continuous Drain Current(@Tc=25 ℃) 2.0 A Continuous Drain Current(@Tc=100 ℃) 1.3 A IDM Drain Current Pulsed (Note1) 6.0 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 120 mJ EAR Repetitive Avalanche Energy (Note1) 54 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25 ℃) 46 W Derating Factor above 25℃ 0.35 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 2.7 ℃/W RQCS Thermal Resistance , Case-to-Sink 0.5 - - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
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