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WFD2N60 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFD2N60
Description  Silicon N-Channel MOSFET
PDF  7 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFD2N60 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
W
W
W
WFD
FD
FD
FD2
2
2
2N
N
N
N6
6
6
60
0
0
0
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=1A
-
3.8
5.0
Ω
Forward Transconductance
gfs
VDS=50V,ID=1A
-
2.05
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
380
490
pF
Reverse transfer capacitance
Crss
-
7.6
9.9
Output capacitance
Coss
-
35
46
Switching time
Rise time
tr
VDD=300V,
ID=2A，
RG=25Ω，
(Note4,5)
-
16
40
ns
Turn-on time
ton
-
50
110
Fall time
tf
-
40
90
Turn-off
time
toff
-
40
90
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=320V,
VGS=10V,
ID=2A
(Note4,5)
-
15.3
19
nC
Gate-source charge
Qgs
-
1.8
-
Gate-drain("miller") Charge
Qgd
-
7.2
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
2.0
A
Pulse drain reverse current
IDRP
-
-
-
6.0
A
Forward voltage(diode)
VDSF
IDR=2.0A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=2.0A,VGS=0V,
dIDR / dt =100 A / µs
-
250
-
ns
Reverse recovery charge
Qrr
-
1.31
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=55mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25
℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution



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