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CFY77 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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CFY77 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() AlGaAs / InGaAs HEMT CFY 77 ________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 1/4 11.01.1996 HL EH PD 21 D a t a s h e e t Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 HG Q62702-F1549 MW-4 CFY77-10 HH Q62702-F1559 MW-4 Maximum ratings Symbol Unit Drain-source voltage VDS 3.5 V Drain-gate voltage VDG 4.5 V Gate-source voltage VGS -3.0 V Drain current ID 60 mA Channel temperature TCh 150 °C Storage temperature range Tstg -65...+150 °C Total power dissipation (T S < 51°C) 2) Ptot 180 mW Thermal resistance Channel-soldering point source RthChS 550 K/W 1) Dimensions see chapter Package Outlines 2) T S: Temperature measured at soldering point |
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