AlGaAs / InGaAs HEMT

CFY 77

________________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 2/4

11.01.1996

HL EH PD 21

Electrical characteristics at

TA = 25°C

unless otherwise specified

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

VDS = 2 V

VGS = 0 V

IDSS

15

30

60

mA

Pinch-off voltage

VDS = 2 V

ID = 1 mA

VGS(P)

-2

-0.7

-0.2

V

Gate leakage current

VDS = 2 V

ID = 15 mA

IG

-

0.05

2

µA

Transconductance

VDS = 2 V

ID = 15 mA

gm

50

65

-

mS

Noise figure

VDS = 2 V

ID = 15 mA

f = 12 GHz

CFY77-08

CFY77-10

F

-

-

0.7

0.9

0.8

1

dB

Associated gain

VDS = 2 V

ID = 15 mA

f = 12 GHz

CFY77-08

CFY77-10

Ga

10

9.5

10.5

10

-

-

dB