GaAs FET

CLY 2

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Siemens Aktiengesellschaft

pg. 1/77

17.12.96

HL EH PD 21

D a t a s h e e t

* Power amplifier for mobile phones

* For frequencies up to 3 GHz

* Operating voltage range: 2 to 6 V

* P

* High efficiency better 55 %

ESD:

Electrostatic discharge sensitive device,

observe handling precautions!

6

5

4

3

2

1

Type

Marking

Ordering code

(taped)

Pin Configuration

.

1

2

3

4

5

6

Package 1)

CLY 2

Y2

Q62702-L96

G

S

D

D

S

G

MW 6

Maximum ratings

Symbol

Unit

Drain-source voltage

VDS

9V

Drain-gate voltage

VDG

12

V

Gate-source voltage

VGS

-6

V

Drain current

ID

600

mA

Channel temperature

TCh

150

°C

Storage temperature

Tstg

-55...+150

°C

Ptot

900

mW

Thermal Resistance

RthChS

K/W

2) TS is measured on the source lead at the soldering point to the pcb.