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ILQ1 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # ILQ1
Description  PHOTOTRANSISTOR OPTOCOUPLER
PDF  4 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

ILQ1 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  ILQ1 Datasheet HTML 1Page - Siemens Semiconductor Group ILQ1 Datasheet HTML 2Page - Siemens Semiconductor Group ILQ1 Datasheet HTML 3Page - Siemens Semiconductor Group ILQ1 Datasheet HTML 4Page - Siemens Semiconductor Group  
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5–2
ILD/Q1/2/5
Characteristics
Package Transfer Characteristics (Each Channel)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.25
1.65
V
IF=60 mA
Reverse Current
IR
0.01
10
µAV
R=6 V
Capacitance
C0
25
pF
VR=0 V, f=1 MHz
Thermal Resistance, Junction to Lead
RTHJL
750
°C/W
Detector
Capacitance
CCE
6.8
pF
VCE=5 V, f=1 MHz
Leakage Current, Collector-Emitter
ICEO
550
nA
VCE=10 V
Saturation Voltage, Collector-Emitter
VCESAT
0.25
0.4
ICE=1 mA, IB=20 µA
DC Forward Current Gain
HFE
200
650
1800
VCE= 10 V, IB=20 µA
Saturated DC Forward Current Gain
HFESAT
120
400
600
VCE= 0.4 V, IB=20 µA
Thermal Resistance, Junction to Lead
RTHJL
500
°C/W
Symbol
Min.
Typ.
Max.
Unit
Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
CTRCESAT
75
%
IF=10 mA, VCE=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTRCE
20
90
300
%
IF=10 mA, VCE=10 V
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)
CTRCESAT
170
%
IF=10 mA, VCE=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTRCE
100
200
500
%
IF=10 mA, VCE=10 V
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)
CTRCESAT
100
%
IF=10 mA, VCE=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTRCE
50
130
400
%
IF=10 mA, VCE =10 V
Isolation and Insulation
Common Mode Rejection, Output High
CMH
5000
V/
µsV
CM=50 VP-P, RL=1 kΩ, IF=0 mA
Common Mode Rejection, Output Low
CML
5000
V/
µsV
CM=50 VP-P, RL=1 kΩ, IF=10 mA
Common Mode Coupling Capacitance
CCM
0.01
pF
Package Capacitance
CIO
0.8
pF
VIO=0 V, f=1 MHz



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