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5N80 Datasheet(PDF) 3 Page - Unisonic Technologies

Part # 5N80
Description  5A, 800V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

5N80 Datasheet(HTML) 3 Page - Unisonic Technologies

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5N80
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-483.d
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
800
V
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=-0V
25
µA
Forward
VGS=+30V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-30V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3
5
V
VGS=10V, ID=2.5A
2.0
2.5
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A, TC=100°C
4
Ω
On State Drain Current
ID(ON)
VDS>ID(ON)×RDS(ON)max,VGS=10V
5
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
1190 1450
pF
Output Capacitance
COSS
165
200
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
70
85
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
75
95
nC
Gate to Source Charge
QGS
9
nC
Gate to Drain Charge
QGD
VGS=10V, VDD=500V, ID=6A
(Note 1, 2)
33
nC
Turn-ON Delay Time
tD(ON)
50
65
ns
Rise Time
tR
VDD=400V, ID=2.5A, RG=50Ω
VGS=10V (Note 1, 2)
85
105
ns
Turn-OFF Delay Time
tD(OFF)
120
150
ns
Fall-Time
tF
VDD=640V, ID=5.5A, RG=50Ω
VGS=10V (Note 1, 2)
30
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=5.5A, VGS=0V
2
V
Reverse Recovery Time
trr
700
ns
Reverse Recovery Charge
QRR
7.7
nC
Reverse Recovery Current
IRRM
ISD=5.5A,dI/dt=100A/µs,
VDD=80V,TJ=150°C (Note 1)
22
A
Source-Drain Current
ISD
5.5
A
Source-Drain Current (Pulsed) (Note 1)
ISDM
20
A
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Essentially independent of operating temperature



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