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LD261 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # LD261
Description  GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
PDF  4 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

LD261 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  LD261 Datasheet HTML 1Page - Siemens Semiconductor Group LD261 Datasheet HTML 2Page - Siemens Semiconductor Group LD261 Datasheet HTML 3Page - Siemens Semiconductor Group LD261 Datasheet HTML 4Page - Siemens Semiconductor Group  
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Semiconductor Group
2
1997-11-01
LD 261
Grenzwerte (
T
A = 25 °C)
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 ... + 80
°C
Sperrschichttemperatur
Junction temperature
T
j
80
°C
Sperrspannung
Reverse voltage
V
R
5V
Durchlaßstrom
Forward current
I
F
50
mA
Stoßstrom,
τ≤ 10 µs, D = 0
Surge current
I
FSM
1.6
A
Verlustleistung
Power dissipation
P
tot
70
mW
Wärmewiderstand
Thermal resistance
R
thJA
R
thJL
750
650
K/W
K/W
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
I
F = 50 mA, tp = 20 ms
λ
peak
950
nm
Spektrale Bandbreite bei 50 % von
I
max
Spectral bandwidth at 50 % of
I
max
I
F = 50 m A, tp = 20 ms
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ± 15
Grad
deg.
Aktive Chipfläche
Active chip area
A
0.25
mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L
× B
L
× W
0.5
× 0.5
mm
Abstand Chipoberfläche bis Linsenscheitel
Distance chip surface to lens top
H
1.3 ... 1.9
mm



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