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LD261 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # LD261
Description  GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
PDF  4 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

LD261 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

  LD261 Datasheet HTML 1Page - Siemens Semiconductor Group LD261 Datasheet HTML 2Page - Siemens Semiconductor Group LD261 Datasheet HTML 3Page - Siemens Semiconductor Group LD261 Datasheet HTML 4Page - Siemens Semiconductor Group  
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LD 261
Semiconductor Group
3
1997-11-01
Gruppierung der Strahlstärke I
e in Achsrichtung
gemessen bei einem Raumwinkel
Ω = 0.01 sr
Grouping of radiant intensity I
e
in axial direction
at a solid angle of
Ω = 0.01 sr
Schaltzeiten, I
e von 10 % auf 90 % und von
90 % auf 10 %, bei
I
F = 50 mA, RL = 50 Ω
Switching times, I
e from 10 % to 90 % and
from 90 % to 10 %,
I
F = 50 mA, RL = 50 Ω
t
r, tf
1
µs
Kapazität,
V
R = 0 V
Capacitance
C
o
40
pF
Durchlaßspannung
Forward voltage
I
F = 50 mA, tp = 20 µs
V
F
1.25
(≤ 1.4)
V
Sperrstrom,
V
R = 5 V
Reverse current
I
R
0.01
(≤ 1)µA
Gesamtstrahlungsfluß
Total radiant flux
I
F = 50 mA, tp = 20 ms
Φ
e
9mW
Temperaturkoeffizient von I
e bzw. Φe,
I
F = 50 mA
Temperature coefficient of I
e or Φe,
I
F = 50 mA
TC
I
– 0.55
%/K
Temperaturkoeffizient von
V
F, IF = 50 mA
Temperature coefficient of
V
F, IF = 50 mA
TC
V
– 1.5
mV/K
Temperaturkoeffizient von
λ
peak, IF = 50 mA
Temperature coefficient of
λ
peak, IF = 50 mA
TCλ
0.3
nm/K
Bezeichnung
Description
Symbol
Werte
Values
Einheit
Unit
LD 261
LD 261-5
Strahlstärke
Radiant intensity
I
F = 50 mA, tp = 20 ms
Ie
2 ... 6.3
3.2 ... 6.3
mW/sr
Kennwerte (
T
A = 25 °C)
Characteristics
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit



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