OBTS949 datasheet(2/11 Pages) SIEMENS

2 / 11 page

14.07.1998

Semiconductor Group

Page 2

BTS 949

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Unit

Value

Drain source voltage

VDS

Drain source voltage for short circuit protection

RCC = 0 Ω

without

RCC

VDS(SC)

Continuous input current 1)

-0.2V

≤ V

IN ≤ 10V

VIN < -0.2V or VIN > 10V

IIN

no limit

IIN | ≤ 2

Operating temperature

°C

- 40 ... +150

Storage temperature

Tstg

- 55 ... +150

Power dissipation

TC = 25 °C

240

Ptot

Unclamped single pulse inductive energy

ID(ISO) = 19 A

6000

EAS

Electrostatic discharge voltage (Human Body Model)

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

VESD

3000

Load dump protection

VLoadDump2) = VA + VS

VIN=low or high; VA=13.5 V

td = 400 ms, RI = 2 Ω, ID=0,5*19A

td = 400 ms, RI = 2 Ω, ID= 19A

110

VLD

DIN humidity category, DIN 40 040

IEC climatic category; DIN IEC 68-1

40/150/56

Thermal resistance

junction - case:

RthJC

0.7

K/W

RthJA

junction - ambient:

SMD version, device on PCB: 3)

RthJA

1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)

2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical

without blown air.

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