OBTS949 datasheet(4/11 Pages) SIEMENS

4 / 11 page

14.07.1998

Semiconductor Group

Page 4

BTS 949

Electrical Characteristics

Parameter

Symbol

Values

Unit

at Tj=25°C, unless otherwise specified

min.

typ.

max.

Characteristics

Initial peak short circuit current limit

VIN = 10 V, VDS = 12 V

ID(SCp)

175

Current limit 1)

VIN = 10 V, VDS = 12 V, tm = 350 µs,

Tj = -40...+150 °C, without RCC

VIN = 10 V, VDS = 12 V, tm = 350 µs,

Tj = -40...+150 °C, RCC = 0 Ω

ID(lim)

9.5

150

220

270

Dynamic Characteristics

µs

ton

Turn-on time

VIN to 90% ID:

RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V

100

Turn-off time

VIN to 10% ID:

RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V

toff

170

V/µs

Slew rate on

70 to 50%

Vbb:

RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V

-dVDS/dton

Slew rate off

50 to 70%

Vbb:

RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V

dVDS/dtoff

Protection Functions

Tjt

°C

Thermal overload trip temperature

165

150

EAS

Unclamped single pulse inductive energy

ID = 19 A, Tj = 25 °C, Vbb = 32 V

ID = 19 A, Tj = 150 °C, Vbb = 32 V

6000

1800

Inverse Diode

VSD

Inverse diode forward voltage

IF = 5*19A, tm = 300 µs, VIN = 0 V

1,1

1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values

might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition

OBTS949 Datasheet(PDF) 4 Page - Siemens Semiconductor Group

OBTS949 Datasheet(HTML) 4 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL