LT8610

3

8610p

ELECTRICAL CHARACTERISTICS

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: The LT8610E is guaranteed to meet performance specifications

from 0°C to 125°C junction temperature. Specifications over the –40°C

to 125°C operating junction temperature range are assured by design,

characterization, and correlation with statistical process controls. The

LT8610I is guaranteed over the full –40°C to 125°C operating junction

temperature range. High junction temperatures degrade operating

lifetimes. Operating lifetime is derated at junction temperatures greater

than 125°C.

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Oscillator Frequency

l

l

l

180

665

1.85

210

700

2.00

240

735

2.15

kHz

kHz

MHz

Top Power NMOS On-Resistance

120

mΩ

Top Power NMOS Current Limit

l

3.5

4.8

5.8

A

Bottom Power NMOS On-Resistance

65

mΩ

Bottom Power NMOS Current Limit

2.5

3.3

4.8

A

SW Leakage Current

–1.5

1.5

μA

EN/UV Pin Threshold

EN/UV Rising

l

0.94

1.0

1.06

V

EN/UV Pin Hysteresis

40

mV

EN/UV Pin Current

–20

20

nA

l

6

9.0

12

%

l

–6

–9.0

–12

%

PG Hysteresis

1.3

%

PG Leakage

–40

40

nA

PG Pull-Down Resistance

l

680

2000

Ω

SYNC Threshold

SYNC Falling

SYNC Rising

0.8

1.6

1.1

2.0

1.4

2.4

V

V

SYNC Pin Current

–40

40

nA

TR/SS Source Current

l

1.2

2.2

3.2

μA

TR/SS Pull-Down Resistance

Fault Condition, TR/SS = 0.1V

230

Ω

Note 3: This IC includes overtemperature protection that is intended to

protect the device during overload conditions. Junction temperature will

exceed 150°C when overtemperature protection is active. Continuous

operation above the specified maximum operating junction temperature

will reduce lifetime.