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SST34HF1621 Datasheet(PDF) 21 Page - Silicon Storage Technology, Inc |
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SST34HF1621 Datasheet(HTML) 21 Page - Silicon Storage Technology, Inc |
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21 / 32 page ![]() Data Sheet 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 21 ©2001 Silicon Storage Technology, Inc. S71172-05-000 10/01 523 FIGURE 12: FLASH WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM FIGURE 13: FLASH WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM 523 ILL F10.4 ADDRESS A19-0 DQ15-0 WE# SW0 SW1 SW2 SW3 SW4 SW5 5555 2AAA 2AAA 5555 5555 XX55 XX50 XX55 XXAA XX80 XXAA BAX OE# BEF# SIX-BYTE CODE FOR BLOCK-ERASE TWP Note: This device also supports BEF# controlled Block-Erase operation. The WE# and BEF# signals are interchageable as long as minimum timings are met. (See Table 15) BAX = Block Address X can be VIL or VIH, but no other value. TBY RY/BY# VALID TBR TBE 523 ILL F11.4 ADDRESS A19-0 DQ15-0 WE# SW0 SW1 SW2 SW3 SW4 SW5 5555 2AAA 2AAA 5555 5555 XX55 XX30 XX55 XXAA XX80 XXAA SAX OE# BEF# SIX-BYTE CODE FOR SECTOR-ERASE TSE TWP Note: This device also supports BEF# controlled Sector-Erase operation. The WE# and BEF# signals are interchageable as long as minimum timings are met. (See Table 15) SAX = Sector Address X can be VIL or VIH, but no other value. TBY RY/BY# VALID TBR |
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