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SST34HF1621 Datasheet(PDF) 13 Page - Silicon Storage Technology, Inc |
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SST34HF1621 Datasheet(HTML) 13 Page - Silicon Storage Technology, Inc |
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13 / 32 page ![]() Data Sheet 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 13 ©2001 Silicon Storage Technology, Inc. S71172-05-000 10/01 523 TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T9.1 523 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 523 TABLE 11: FLASH RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.1 523 |
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