Data Sheet

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

9

©2001 Silicon Storage Technology, Inc.

S71150-03-000

6/01

395

AC CHARACTERISTICS

TABLE

Symbol Parameter

SST39LF512-45

SST39LF010-45

SST39LF020-45

SST39LF040-45

SST39LF020-55

SST39LF040-55

SST39VF512-70

SST39VF010-70

SST39VF020-70

SST39VF040-70

SST39VF512-90

SST39VF010-90

SST39VF020-90

SST39VF040-90

Units

Min

Max

Min

Max

Min

Max

Min

Max

Read Cycle Time

45

55

70

90

ns

Chip Enable Access Time

45

55

70

90

ns

Address Access Time

45

55

70

90

ns

Output Enable Access Time

30

30

35

45

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output

0

0

0

0

ns

OE# Low to Active Output

0

0

0

0

ns

CE# High to High-Z Output

15

15

25

30

ns

OE# High to High-Z Output

15

15

25

30

ns

TOH1

Output Hold from Address Change

000

0

ns

T9.2 395

Symbol

Parameter

Min

Max

Units

Byte-Program Time

20

µs

Address Setup Time

0

ns

Address Hold Time

30

ns

WE# and CE# Setup Time

0

ns

WE# and CE# Hold Time

0

ns

OE# High Setup Time

0

ns

OE# High Hold Time

10

ns

CE# Pulse Width

40

ns

WE# Pulse Width

40

ns

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High

30

ns

CE# Pulse Width High

30

ns

Data Setup Time

40

ns

Data Hold Time

0

ns

Software ID Access and Exit Time

150

ns

Sector-Erase

25

ms

Chip-Erase

100

ms

T10.1 395